Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution

Akihiro Ikeda, Koji Nishi, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano

研究成果: Contribution to conferencePaper査読

抄録

Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several problems for the SiC. For example, while a high-temperature (∼1700 °C) post-implantation annealing is required to electrically activate implanted species[1], it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [2]. Therefore, development of new technology for local doping of SiC is highly demanded.

本文言語英語
ページ63-65
ページ数3
DOI
出版ステータス出版済み - 1 1 2013
イベント2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, 日本
継続期間: 6 6 20136 7 2013

その他

その他2013 13th International Workshop on Junction Technology, IWJT 2013
国/地域日本
CityKyoto
Period6/6/136/7/13

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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