Characteristic transport properties observed in underdoped YBa2Cu3O6+x

Kouichi Semba, Masashi Mukaida, Azusa Matsuda

研究成果: ジャーナルへの寄稿Conference article

1 引用 (Scopus)

抄録

By annealing under the equilibrium oxygen pressure, we have succeeded in obtaining YBa2Cu3O6+x with any doping level. Both in bulk and film samples, the doping driven superconductor-to-insulator (S-I) transition has been observed at ρab≃0.8 mΩ cm which corresponds to the universal resistance h/4e2 per CuO2 bi-layer. The observed critical carrier density is nH SI≃3 × 1020 cm-3. Within the critical region of the S-I transition, using a thin film sample, we have succeeded in observing the resistivity scaling as a function of doping. The carrier density obeys the relation nH ∝x - 0.2 in the underdoped region (0.2≤x< 0.5), where the conductivity is substantially small and transport properties show weaker temperature dependence. The quantum effects are considered to be more important e.g., the quantum phase fluctuation in superconductors with small superfluid density.

元の言語英語
ページ(範囲)74-76
ページ数3
ジャーナルPhysica B: Condensed Matter
312-313
DOI
出版物ステータス出版済み - 3 1 2002
外部発表Yes
イベントInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, 米国
継続期間: 8 6 20028 6 2002

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Transport properties
Superconducting materials
transport properties
Doping (additives)
Carrier concentration
insulators
Annealing
Oxygen
scaling
Thin films
conductivity
temperature dependence
electrical resistivity
annealing
oxygen
thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

Characteristic transport properties observed in underdoped YBa2Cu3O6+x . / Semba, Kouichi; Mukaida, Masashi; Matsuda, Azusa.

:: Physica B: Condensed Matter, 巻 312-313, 01.03.2002, p. 74-76.

研究成果: ジャーナルへの寄稿Conference article

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N2 - By annealing under the equilibrium oxygen pressure, we have succeeded in obtaining YBa2Cu3O6+x with any doping level. Both in bulk and film samples, the doping driven superconductor-to-insulator (S-I) transition has been observed at ρab≃0.8 mΩ cm which corresponds to the universal resistance h/4e2 per CuO2 bi-layer. The observed critical carrier density is nH SI≃3 × 1020 cm-3. Within the critical region of the S-I transition, using a thin film sample, we have succeeded in observing the resistivity scaling as a function of doping. The carrier density obeys the relation nH ∝x - 0.2 in the underdoped region (0.2≤x< 0.5), where the conductivity is substantially small and transport properties show weaker temperature dependence. The quantum effects are considered to be more important e.g., the quantum phase fluctuation in superconductors with small superfluid density.

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