Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

J. Brault, E. Bellet-Amalric, Tanaka Satoru, F. Enjalbert, D. Le Si Dang, E. Sarigiannidou, J. L. Rouviere, G. Feuillet, B. Daudin

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

元の言語英語
ページ(範囲)314-317
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
240
発行部数2
DOI
出版物ステータス出版済み - 11 1 2003
外部発表Yes

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Molecular beam epitaxy
molecular beam epitaxy
Substrates
Atomic force microscopy
atomic force microscopy
disorientation
X ray diffraction
Reflection high energy electron diffraction
high resolution
diffraction
high energy electrons
Structural properties
x rays
electron diffraction
Plasmas
curves

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Brault, J., Bellet-Amalric, E., Satoru, T., Enjalbert, F., Le Si Dang, D., Sarigiannidou, E., ... Daudin, B. (2003). Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy. Physica Status Solidi (B) Basic Research, 240(2), 314-317. https://doi.org/10.1002/pssb.200303268

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy. / Brault, J.; Bellet-Amalric, E.; Satoru, Tanaka; Enjalbert, F.; Le Si Dang, D.; Sarigiannidou, E.; Rouviere, J. L.; Feuillet, G.; Daudin, B.

:: Physica Status Solidi (B) Basic Research, 巻 240, 番号 2, 01.11.2003, p. 314-317.

研究成果: ジャーナルへの寄稿記事

Brault, J, Bellet-Amalric, E, Satoru, T, Enjalbert, F, Le Si Dang, D, Sarigiannidou, E, Rouviere, JL, Feuillet, G & Daudin, B 2003, 'Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy', Physica Status Solidi (B) Basic Research, 巻. 240, 番号 2, pp. 314-317. https://doi.org/10.1002/pssb.200303268
Brault, J. ; Bellet-Amalric, E. ; Satoru, Tanaka ; Enjalbert, F. ; Le Si Dang, D. ; Sarigiannidou, E. ; Rouviere, J. L. ; Feuillet, G. ; Daudin, B. / Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy. :: Physica Status Solidi (B) Basic Research. 2003 ; 巻 240, 番号 2. pp. 314-317.
@article{1d2e634d95e3480e8d146cbec22b8f7a,
title = "Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy",
abstract = "We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.",
author = "J. Brault and E. Bellet-Amalric and Tanaka Satoru and F. Enjalbert and {Le Si Dang}, D. and E. Sarigiannidou and Rouviere, {J. L.} and G. Feuillet and B. Daudin",
year = "2003",
month = "11",
day = "1",
doi = "10.1002/pssb.200303268",
language = "English",
volume = "240",
pages = "314--317",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "2",

}

TY - JOUR

T1 - Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

AU - Brault, J.

AU - Bellet-Amalric, E.

AU - Satoru, Tanaka

AU - Enjalbert, F.

AU - Le Si Dang, D.

AU - Sarigiannidou, E.

AU - Rouviere, J. L.

AU - Feuillet, G.

AU - Daudin, B.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

AB - We present the growth of AlN films on vicinal substrates of SiC(0001), The layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) and examined in-situ using reflection high-energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X-Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c-planes of the AlN with respect to the substrate.

UR - http://www.scopus.com/inward/record.url?scp=0345357957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345357957&partnerID=8YFLogxK

U2 - 10.1002/pssb.200303268

DO - 10.1002/pssb.200303268

M3 - Article

VL - 240

SP - 314

EP - 317

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 2

ER -