The artificial stress-induced anisotropy in a liquid phase epitaxial garnet film has been studied aiming at the application to a bit confinement pattern in Bloch line memory. The potential well for a vertical Bloch line (VBL) pair generated by the stress-induced anisotropy variation has been computed. VBL bit propagation is studied experimentally for a test chip with the stress-induced bit positions. The bit propagation was successfully performed under the Cr bit pattern with a periodic film thickness variation of 0.08 ym by applying the drive pulses with rise time shorter than 100 ns and fall time longer than 1000 ns.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)