Characteristics of silicon CMP performed in various high pressure atmospheres - Development of a new double-side simultaneous CMP machine housed in a high pressure chamber

Kei Kitamura, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Yoji Umezaki', Tsutomu Yamazaki, Yoji Matsukawa, Tadashi Hasegawa, Isamu Koshiyama, Koichiro Ichikawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

A prototype of a unique CMP machine, which can perform double side CMP simultaneously in a sealed pressure chamber, is developed as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon wafers (100) are performed by charging the chamber with various gases. As a result of applying high pressure gases containing oxygen to Si-CMP, 25% increment of removal rate (RR) is achieved.

本文言語英語
ホスト出版物のタイトルAdvanced Metallization Conference 2010
ページ278-279
ページ数2
出版ステータス出版済み - 2010
イベントAdvanced Metallization Conference 2010 - Albany, NY, 米国
継続期間: 10 5 201010 7 2010

その他

その他Advanced Metallization Conference 2010
国/地域米国
CityAlbany, NY
Period10/5/1010/7/10

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 産業および生産工学

フィンガープリント

「Characteristics of silicon CMP performed in various high pressure atmospheres - Development of a new double-side simultaneous CMP machine housed in a high pressure chamber」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル