Characteristics of Tc and ρ(T) of polycrystalline (In 2O3)-(ZnO) films with low carrier density

B. Shinozaki, S. Takada, N. Kokubo, K. Makise, T. Asano, K. Yamada, K. Yano, H. Nakamura

研究成果: Contribution to journalConference article査読

抄録

For the polycrystalline (In2O3)-(ZnO) prepared by annealing in air, we investigated the relation among superconductivity, ρ(T) characteristics and preparation conditions. To clarify the distribution of elements, we studied the microstructure by scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). It was found that 1) The films annealed at restricted regions of annealing temperature T a and time ta show the superconductivity. Transition temperature Tc and carrier density n are Tc<3.3K and n ≈1025/m3∼1026/m3, respectively. 2) The data on EELS spectra mapping of indium plasmon indicate that droplets of the pure indium phase distribute discretely on grain boundaries and near the interface between the film and the glass substrate. 3) Although data in the Tc - Ta relation are scattered, the T c shows relatively good correlation with n, taking a convex form.

本文言語英語
論文番号022107
ジャーナルJournal of Physics: Conference Series
400
PART 2
DOI
出版ステータス出版済み - 2012
イベント26th International Conference on Low Temperature Physics, LT 2011 - Beijing, 中国
継続期間: 8 10 20118 17 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

フィンガープリント 「Characteristics of T<sub>c</sub> and ρ(T) of polycrystalline (In <sub>2</sub>O<sub>3</sub>)-(ZnO) films with low carrier density」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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