Characteristics of Tc and ρ(T) of polycrystalline (In 2O3)-(ZnO) films with low carrier density

B. Shinozaki, S. Takada, N. Kokubo, K. Makise, T. Asano, K. Yamada, K. Yano, H. Nakamura

研究成果: ジャーナルへの寄稿Conference article

抜粋

For the polycrystalline (In2O3)-(ZnO) prepared by annealing in air, we investigated the relation among superconductivity, ρ(T) characteristics and preparation conditions. To clarify the distribution of elements, we studied the microstructure by scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). It was found that 1) The films annealed at restricted regions of annealing temperature T a and time ta show the superconductivity. Transition temperature Tc and carrier density n are Tc<3.3K and n ≈1025/m3∼1026/m3, respectively. 2) The data on EELS spectra mapping of indium plasmon indicate that droplets of the pure indium phase distribute discretely on grain boundaries and near the interface between the film and the glass substrate. 3) Although data in the Tc - Ta relation are scattered, the T c shows relatively good correlation with n, taking a convex form.

元の言語英語
記事番号022107
ジャーナルJournal of Physics: Conference Series
400
発行部数PART 2
DOI
出版物ステータス出版済み - 1 1 2012
イベント26th International Conference on Low Temperature Physics, LT 2011 - Beijing, 中国
継続期間: 8 10 20118 17 2011

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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