Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma

Doan Ha Thang, K. Sasaki, H. Muta, N. Itagaki, Y. Kawai

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

Plasma parameters in the fabrication of μc-Si thin films using 915 MHz ECR plasma with SiH4/H2 mixtures were investigated experimentally. Plasma parameters such as electron temperature and ion density were measured by a heated Langmuir probe. The deposition rate and the volume fraction of μc-Si were measured by spectrophotometer and Raman spectroscopy, respectively. As a result, it was observed that the characteristics of plasma parameters in SiH4/H2 plasma were different with those in H2 plasma although the concentration of SiH4 was only about 0.1. In addition, it was found that relatively high deposition rate can be realized even under the condition of both low gas pressure and low gas flow rate.

本文言語英語
ページ(範囲)485-488
ページ数4
ジャーナルThin Solid Films
506-507
DOI
出版ステータス出版済み - 5月 26 2006
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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