Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy

K. Kakimoto, T. Katoda

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

抄録

Difference in degree of disorder introduced by ion implantation into In-As and Ga-As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In-As bond than into the Ga-As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600°C.

元の言語英語
ページ(範囲)811-813
ページ数3
ジャーナルApplied Physics Letters
42
発行部数9
DOI
出版物ステータス出版済み - 12 1 1983
外部発表Yes

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laser spectroscopy
Raman spectroscopy
disorders
ion implantation
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Characterization of disordered bonds in Si-implanted Ga 0.47In0.53As with laser Raman spectroscopy. / Kakimoto, K.; Katoda, T.

:: Applied Physics Letters, 巻 42, 番号 9, 01.12.1983, p. 811-813.

研究成果: ジャーナルへの寄稿記事

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