Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence

Fabi Zhang, Yoshifumi Ikoma, Jinping Zhang, Ke Xu, Katsuhiko Saito, Qixin Guo

    研究成果: ジャーナルへの寄稿学術誌査読

    抄録

    The authors have investigated the effects of a low-temperature ZnTe buffer layer on structural and optical properties of ZnTe epilayers grown on (100) GaAs substrates by transmission electron microscopy and photoluminescence measurements. It has been found that the low-temperature ZnTe buffer layer can reduce the defects such as disordered region in the ZnTe buffer layer and suppress the dislocations at the ZnTe surface region, resulting in the formation of a high quality ZnTe epilayer grown on the low-temperature buffer layer.

    本文言語英語
    論文番号021508
    ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    30
    2
    DOI
    出版ステータス出版済み - 3月 2012

    !!!All Science Journal Classification (ASJC) codes

    • 凝縮系物理学
    • 表面および界面
    • 表面、皮膜および薄膜

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