Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence

Physics

• Temperature 75%
• Dislocation 75%
• Substrates 50%
• Region 50%
• Photoluminescence 50%
• Transmission Electron Microscopy 50%
• Quality 25%
• Optical Properties 25%
• Defects 25%

Material Science

• Buffer Layer 100%
• Gallium Arsenide 50%
• Epilayers 50%
• Surface 25%
• Characterization 25%
• Defect 25%

Chemistry

• Reaction Temperature 75%
• Photoluminescence 50%
• Surface 25%
• Optical Property 25%