Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm2/Vs, 1.5×1018 cm-3, 14.6 %, and 0.08 Ω.cm, respectively.

元の言語英語
ホスト出版物のタイトルAM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
ホスト出版物のサブタイトルTFT Technologies and FPD Materials, Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(印刷物)9784990875350
DOI
出版物ステータス出版済み - 8 15 2018
イベント25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, 日本
継続期間: 7 3 20187 6 2018

出版物シリーズ

名前AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

その他

その他25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
日本
Kyoto
期間7/3/187/6/18

Fingerprint

phosphoric acid
Phosphoric acid
Excimer lasers
Thin film transistors
Polysilicon
excimer lasers
transistors
Doping (additives)
activation
coatings
Fabrication
Thin films
Coatings
fabrication
thin films
carrier mobility
Chemical activation
implantation
Laser beam effects
crystallization

All Science Journal Classification (ASJC) codes

  • Media Technology
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

これを引用

Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T., & Ikenoue, H. (2018). Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication. : AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings [8437343] (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2018.8437343

Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication. / Imokawa, Kaname; Tanaka, Nozomu; Suwa, Akira; Nakamura, Daisuke; Sadoh, Taizoh; Goto, Tetsuya; Ikenoue, Hiroshi.

AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8437343 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Imokawa, K, Tanaka, N, Suwa, A, Nakamura, D, Sadoh, T, Goto, T & Ikenoue, H 2018, Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication. : AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8437343, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018, Kyoto, 日本, 7/3/18. https://doi.org/10.23919/AM-FPD.2018.8437343
Imokawa K, Tanaka N, Suwa A, Nakamura D, Sadoh T, Goto T その他. Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication. : AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8437343. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). https://doi.org/10.23919/AM-FPD.2018.8437343
Imokawa, Kaname ; Tanaka, Nozomu ; Suwa, Akira ; Nakamura, Daisuke ; Sadoh, Taizoh ; Goto, Tetsuya ; Ikenoue, Hiroshi. / Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication. AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
@inproceedings{96044b5bf41841f1b01da9f030d8f6c3,
title = "Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication",
abstract = "We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm2/Vs, 1.5×1018 cm-3, 14.6 {\%}, and 0.08 Ω.cm, respectively.",
author = "Kaname Imokawa and Nozomu Tanaka and Akira Suwa and Daisuke Nakamura and Taizoh Sadoh and Tetsuya Goto and Hiroshi Ikenoue",
year = "2018",
month = "8",
day = "15",
doi = "10.23919/AM-FPD.2018.8437343",
language = "English",
isbn = "9784990875350",
series = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",

}

TY - GEN

T1 - Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication

AU - Imokawa, Kaname

AU - Tanaka, Nozomu

AU - Suwa, Akira

AU - Nakamura, Daisuke

AU - Sadoh, Taizoh

AU - Goto, Tetsuya

AU - Ikenoue, Hiroshi

PY - 2018/8/15

Y1 - 2018/8/15

N2 - We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm2/Vs, 1.5×1018 cm-3, 14.6 %, and 0.08 Ω.cm, respectively.

AB - We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm2/Vs, 1.5×1018 cm-3, 14.6 %, and 0.08 Ω.cm, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85053140546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053140546&partnerID=8YFLogxK

U2 - 10.23919/AM-FPD.2018.8437343

DO - 10.23919/AM-FPD.2018.8437343

M3 - Conference contribution

AN - SCOPUS:85053140546

SN - 9784990875350

T3 - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

BT - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

ER -