Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence

A. Petersson, S. Tanaka, Y. Aoyagi, L. Samuelson

研究成果: ジャーナルへの寄稿記事

抄録

GaN quantum dots on an AlGaN surface can be fabricated by the use of Si as a surface modifier for the formation of the quantum dots. The details of this mechanism is not yet fully understood. The scope of this paper is to investigate how the growth temperature is affecting the formation of these types of structures. By the use of cathodoluminescence it was possible to visualize the spatial distribution of the luminescence from the quantum dots, the barrier and luminescence tentatively attributed to deep level impurities induced by the Si treatment.

元の言語英語
ページ(範囲)1335-1338
ページ数4
ジャーナルMaterials Science Forum
264-268
発行部数PART 2
出版物ステータス出版済み - 12 1 1998
外部発表Yes

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Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Luminescence
Substrates
luminescence
Growth temperature
Spatial distribution
spatial distribution
Impurities
impurities
aluminum gallium nitride
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Petersson, A., Tanaka, S., Aoyagi, Y., & Samuelson, L. (1998). Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence. Materials Science Forum, 264-268(PART 2), 1335-1338.

Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence. / Petersson, A.; Tanaka, S.; Aoyagi, Y.; Samuelson, L.

:: Materials Science Forum, 巻 264-268, 番号 PART 2, 01.12.1998, p. 1335-1338.

研究成果: ジャーナルへの寄稿記事

Petersson, A, Tanaka, S, Aoyagi, Y & Samuelson, L 1998, 'Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence', Materials Science Forum, 巻. 264-268, 番号 PART 2, pp. 1335-1338.
Petersson, A. ; Tanaka, S. ; Aoyagi, Y. ; Samuelson, L. / Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence. :: Materials Science Forum. 1998 ; 巻 264-268, 番号 PART 2. pp. 1335-1338.
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