Characterization of inclusions in SiC bulk crystals grown by modified lely method

Fusao Hirose, Yasuo Kitou, Naoki Oyanagi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

We have investigated two types of inclusions. They were a dendrite and a transparent inclusion, which have been seldom reported. The dendrite consisted of carbon, titanium and vanadium except for silicon. It should be carbide of titanium and vanadium. The titanium and vanadium might be incorporated from the source. By using a high purity source, it is possible to prevent generation of the dendrite. The transparent inclusion was observed in the SiC bulk crystal even in the growth with the chemical treated SiC source powder. A remarkable feature of the transparent inclusion was to have a small empty core. It was considered that the core might be a trace of Si droplet caused by C/Si ratio fluctuation of sublimated gas. Therefore, the C/Si ratio during the growth should be stabilized to prevent generation of the transparent inclusions.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2001
編集者S. Yoshida, S. Nishino, H. Harima, T. Kimoto
出版社Trans Tech Publications Ltd
ページ75-78
ページ数4
ISBN(印刷版)9780878498949
DOI
出版ステータス出版済み - 1 1 2002
外部発表はい
イベントInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, 日本
継続期間: 10 28 200111 2 2001

出版物シリーズ

名前Materials Science Forum
389-393
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

会議

会議International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
国/地域日本
CityTsukuba
Period10/28/0111/2/01

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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