Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy

Emi MacHida, Yukiharu Uraoka, Takashi Fuyuki, Ryohei Kokawa, Takeshi Ito, Hiroshi Ikenoue

研究成果: ジャーナルへの寄稿学術誌査読

6 被引用数 (Scopus)

抄録

We observed local electrical properties of polycrystalline silicon films by conductive atomic force microscopy. Moreover, we investigated the effects of hydrogen termination on the polycrystalline silicon films. Before hydrogen termination, conductive regions in grain disappeared with the repeated scanning of the cantilever, while conductive regions in grain boundary almost unchanged. It is considered that hopping conduction is a major electrical conduction mechanism at grain boundaries. After 5 min hydrogen termination, locally nonterminated regions were observed near grain boundaries. This suggests that hydrogen termination of the polycrystalline silicon does not randomly progress, and there are regions that cannot be easily inactivated near grain boundaries.

本文言語英語
論文番号182104
ジャーナルApplied Physics Letters
94
18
DOI
出版ステータス出版済み - 2009
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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