n -type Β -FeSi2 /p -type Si heterojunctions were fabricated from Β -FeSi2 films epitaxially grown on Si(111) by facing-target direct-current sputtering. Sharp film-substrate interfaces were confirmed by scanning electron microscopy. The current-voltage and photoresponse characteristics were measured at room temperature. They exhibited good rectifying properties and a change of approximately one order of magnitude in the current at a bias voltage of -1 V under illumination by a 6 mW, 1.31 μm laser. The estimated detectivity was 1.5× 109 cm Hz W at 1.31 μm. The results suggest that the Β -FeSi2 /Si heterojunctions can be used as near-infrared photodetectors that are compatible with silicon integrated circuits.
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