Characterization of phosphorus in layer semiconductor GaSe

S. Shigetomi, T. Ikari, H. Nakashima

    研究成果: Contribution to journalArticle査読

    10 被引用数 (Scopus)

    抄録

    Radiative recombination mechanisms in P-doped p-GaSe have been investigated by using photoluminescence (PL) measurements. The PL spectra related to impurity level are dominated by the emission band at 1.355 eV. The temperature dependences of the PL intensity, peak energy, and full-width at half-maximum are characterized by the configuration coordinate model. The acceptor level located at about 0.45 eV above the valence band is detected by using Hall effect and deep-level transient spectroscopy measurements. This acceptor level is probably associated with the 1.355 eV emission band formed by P atoms.

    本文言語英語
    ページ(範囲)79-84
    ページ数6
    ジャーナルJournal of Luminescence
    79
    2
    DOI
    出版ステータス出版済み - 8 28 1998

    All Science Journal Classification (ASJC) codes

    • 生物理学
    • 生化学
    • 化学 (全般)
    • 原子分子物理学および光学
    • 凝縮系物理学

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