Characterization of Si thin films doped by wet-chemical laser processing

Akira Suwa, Nozomu Tanaka, Taizoh Sadoh, Daisuke Nakamura, Hiroshi Ikenoue

研究成果: ジャーナルへの寄稿Conference article

2 引用 (Scopus)

抄録

In this paper, we report on the characterization of Si thin films doped by wet-chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm2/V·s, 5.5 × 1017 cm-3, and 0.15 Ω·cm, respectively.

元の言語英語
ページ(範囲)430-432
ページ数3
ジャーナルDigest of Technical Papers - SID International Symposium
48
発行部数1
DOI
出版物ステータス出版済み - 1 1 2017
イベントSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, 米国
継続期間: 5 21 20175 26 2017

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Chemical lasers
Doping (additives)
Thin films
Processing
Ion implantation
Carrier concentration
Chemical activation
Lasers

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Characterization of Si thin films doped by wet-chemical laser processing. / Suwa, Akira; Tanaka, Nozomu; Sadoh, Taizoh; Nakamura, Daisuke; Ikenoue, Hiroshi.

:: Digest of Technical Papers - SID International Symposium, 巻 48, 番号 1, 01.01.2017, p. 430-432.

研究成果: ジャーナルへの寄稿Conference article

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