Characterization of SiGe layer on insulator by in-plane diffraction method

M. Imai, Y. Miyamura, D. Murata, A. Ogi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Four types of SGOI (SiGe on Insulator) wafers were fabricated by the combination of SiGe epitaxial growth, SIMOX (Separation by Implanted Oxygen) processes and oxidation. By the cross-sectional TEM (Transmission Electron Microscopy) and EDS (Energy Dispersive Spectroscopy), it is confirmed that each wafer has smooth interface between a top layer (Si or SiGe) and a BOX (buried oxide) layer and Ge atoms in SiGe layer distribute homogeneously for SGOI_A and SGOI_B. Using high-resolution X-ray diffractometry, the crystallographic properties of SiGe layer are characterized with in-plane and out of plane diffraction methods. The lattice constants are calculated for the planes of perpendicular and parallel to wafer surface and the degree of relaxation are estimated for the SiGe layer of each wafer. The rocking curve measurements reveal that the lattice turbulence of SiGe layer is influenced by SIMOX process conditions, Ge content and the layer thickness.

本文言語英語
ホスト出版物のタイトルGettering and Defect Engineering in Semiconductor Technology XI - GADEST 2005
編集者B. Pichaud, A. Claverie, D. Alquier, H. Richter, M. Kittler, H. Richter, M. Kittler
出版社Trans Tech Publications Ltd
ページ451-456
ページ数6
ISBN(印刷版)9783908451136
DOI
出版ステータス出版済み - 2005
外部発表はい
イベント11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005 - Giens, Marseilles, フランス
継続期間: 9 25 20059 30 2005

出版物シリーズ

名前Solid State Phenomena
108-109
ISSN(印刷版)1012-0394
ISSN(電子版)1662-9779

会議

会議11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005
国/地域フランス
CityGiens, Marseilles
Period9/25/059/30/05

All Science Journal Classification (ASJC) codes

  • 原子分子物理学および光学
  • 材料科学(全般)
  • 凝縮系物理学

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