TY - JOUR
T1 - Characterization of tantalum nitride thin films fabricated by pulsed Nd
T2 - YAG laser deposition method
AU - Kawasaki, H.
AU - Doi, K.
AU - Namba, J.
AU - Suda, Y.
AU - Ohshima, T.
AU - Ebihara, K.
PY - 2001/4
Y1 - 2001/4
N2 - Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.
AB - Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.
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U2 - 10.1143/jjap.40.2391
DO - 10.1143/jjap.40.2391
M3 - Article
AN - SCOPUS:0035301753
SN - 0021-4922
VL - 40
SP - 2391
EP - 2394
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 A
ER -