Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Pucheng Liu, Kuniyuki Kakushima, Hiroshi Iwai, Akira Nakajima, Toshiharu Makino, Masahiro Ogura, Shinichi Nishizawa, Hiromichi Ohashi

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抜粋

Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.

元の言語英語
ホスト出版物のタイトル1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
ページ155-158
ページ数4
DOI
出版物ステータス出版済み - 12 1 2013
外部発表Yes
イベント1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Columbus, OH, 米国
継続期間: 10 27 201310 29 2013

出版物シリーズ

名前1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

その他

その他1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
米国
Columbus, OH
期間10/27/1310/29/13

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

これを引用

Liu, P., Kakushima, K., Iwai, H., Nakajima, A., Makino, T., Ogura, M., ... Ohashi, H. (2013). Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface. : 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings (pp. 155-158). [6695585] (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings). https://doi.org/10.1109/WiPDA.2013.6695585