Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces

Koji Ando, Koichiro Saiki, Yasuhiro Sato, Atsushi Koma, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Ultrathin CaF2films heteroepitaxially grown on Si(111) substrates have been characterized by low-energy electron energy loss spectroscopy and Auger electron spectroscopy. The measured specimens were transferred from the growth chamber to an analyzing chamber located at a distant facility without suffering any contamination by use of a newly developed portable vacuum chamber. It has been proved from the measurements that a CaF2film of good quality grows even from the very initial stage of epitaxy.

本文言語英語
ページ(範囲)L170-L172
ジャーナルJapanese journal of applied physics
27
2A
DOI
出版ステータス出版済み - 2 1988
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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