Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures

Nathaporn Promros, Ryuhei Iwasaki, Suguru Funasaki, Kyohei Yamashita, Tsuyoshi Yoshitake

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    抄録

    In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.

    本文言語英語
    ホスト出版物のタイトルMulti-Functional Materials and Structures IV
    ページ217-220
    ページ数4
    DOI
    出版ステータス出版済み - 2013
    イベント4th International Conference on Multi-Functional Materials and Structures, MFMS 2013 - Sathorn-Taksin, Bangkok, タイ
    継続期間: 7 14 20137 17 2013

    出版物シリーズ

    名前Advanced Materials Research
    747
    ISSN(印刷版)1022-6680

    その他

    その他4th International Conference on Multi-Functional Materials and Structures, MFMS 2013
    国/地域タイ
    CitySathorn-Taksin, Bangkok
    Period7/14/137/17/13

    All Science Journal Classification (ASJC) codes

    • 工学(全般)

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