Charge compensation by excess oxygen in amorphous In-Ga-Zn-O films deposited by pulsed laser deposition

Takatoshi Orui, Johannes Herms, Yuichiro Hanyu, Shigenori Ueda, Ken Watanabe, Isao Sakaguchi, Naoki Ohashi, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

研究成果: Contribution to journalArticle査読

19 被引用数 (Scopus)

抄録

We investigated effects of base pressure (Pbase) of the deposition chamber on electrical properties and defect states of amorphous In-Ga-Zn-O (a-IGZO) thin films deposited by pulsed laser deposition. The impurity hydrogen concentration was increased by an order of magnitude when Pbase was deteriorated from <10-5 to 10-3Pa. The optimum oxygen partial pressures (PO2) were 2-4 Pa for an optimized deposition condition with the good Pbase; on the other hand, off-optimized and/or poor Pbase require much higher PO2. This result provides an experimental evidence for a charge compensation model by excess oxygen for H-containing a-IGZO. Thermal desorption spectra indicated that the impurity hydrogens originate mainly from water molecules in the residual gas and exist as -OH chemical bonding states in the a-IGZO films. Hard X-ray photoemission spectroscopy revealed that these -OH states form deep defects above the valence band maximum.

本文言語英語
論文番号6898819
ページ(範囲)518-522
ページ数5
ジャーナルIEEE/OSA Journal of Display Technology
11
6
DOI
出版ステータス出版済み - 6 1 2015
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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