Chemical mechanical polishing of patterned copper wafer surface using water-soluble fullerenol slurry

Y. Takaya, H. Kishida, T. Hayashi, M. Michihata, K. Kokubo

研究成果: ジャーナルへの寄稿学術誌査読

17 被引用数 (Scopus)

抄録

Cu-CMP has become a key fabrication process by which high-performance semiconductor devices are realized. Therefore, a novel Cu-CMP technique using water-soluble fullerenol slurry was developed. The experimental results show that the proposed Cu-CMP technique realizes a high material removal rate and low dishing performance for the polishing of a patterned Cu-wafer. An XPS analysis and SEM observation showed that these advantageous polishing performances were achieved by the chemical effect of using fullerenol as a polishing agent. The fullerenol was found to chemically react with the copper to form a complex brittle layer which was fragile enough to be removed by rubbing with a polishing pad.

本文言語英語
ページ(範囲)567-570
ページ数4
ジャーナルCIRP Annals - Manufacturing Technology
60
1
DOI
出版ステータス出版済み - 2011
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 機械工学
  • 産業および生産工学

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