Chemical States of Implanted Aluminum Ions in Silica and Silicon Ions in Alumina

Kohei Fnkumi, Akiyoshi Chayahara, Masaki Makihara, Kanenaga Fujii, Junji Hayakawa, Mamoru Satou

研究成果: ジャーナルへの寄稿学術誌査読

19 被引用数 (Scopus)

抄録

Aluminum and silicon ions have been implanted in silica glass and α‐alumina single crystal, respectively, to doses ranging from 1 × 1015 to 1 × 1017 ions·cm‐2. The chemical states of these implanted ions have been studied by X‐ray fluorescence spectroscopy. It is found that the implanted aluminum atoms are coordinated only by oxygen atoms, irrespective of implantation dose. On the other hand, the implanted silicon atoms are coordinated only by oxygen atoms at low doses and by both oxygen and silicon atoms at high doses. Although the chemical state of the aluminum atoms is unchanged by heat treatment, that of the silicon atoms is changed toward a less positively charged state. It is inferred that the chemical states of the implanted atoms are controlled by the transport process, although these tend to obey the thermodynamic stability.

本文言語英語
ページ(範囲)3019-3022
ページ数4
ジャーナルJournal of the American Ceramic Society
77
11
DOI
出版ステータス出版済み - 11月 1994

!!!All Science Journal Classification (ASJC) codes

  • セラミックおよび複合材料
  • 材料化学

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