Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth

Kaoru Toko, Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

53 被引用数 (Scopus)

抄録

High-quality Ge-on-insulators (GOIs) are essential structures for high-performance transistors on an Si platform. We developed a rapid-melting-growth process for amorphous Ge (a-Ge) by optimizing the cooling rate and the underlying insulating materials. The effects of the solidification process for molten Ge on hole generation and spontaneous nucleation in Ge were determined. In addition, nucleation in the a-Ge matrix was found to be drastically suppressed by substituting SiO2 underlayers with SiN underlayers. By combining high cooling rates (10.5-11.5 °Cs-1) and SiN underlayers, we obtained ultra-long single crystal GOI strips (1 cm) with high hole mobilities (> 1000 cm2V-1s -1). This chip-size formation of high-quality GOI will facilitate the development of advanced high-speed Ge-based devices.

本文言語英語
論文番号032103
ジャーナルApplied Physics Letters
99
3
DOI
出版ステータス出版済み - 7 18 2011

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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