抄録
A study was conducted to demonstrate chloride-based chemical vapor deposition (CVD) growth of silicon carbide (SiC) for electronic applications. SiC homoepitaxial growth was done using CVD with silane (SiH 4) as the silicon precursor and light hydrocarbons, including ethylene (C 2H 4) or propane (C 3H 8) as the carbon precursor. Simulation was an invaluable tool along with comparisons between different chlorinated chemistries to obtain a deeper understanding of the chloride-based process and provide more information. A number of approaches were selected to add chlorine to the gas mixture for the growth of SiC epitaxial layers using a chloride-based chemistry.
本文言語 | 英語 |
---|---|
ページ(範囲) | 2434-2453 |
ページ数 | 20 |
ジャーナル | Chemical Reviews |
巻 | 112 |
号 | 4 |
DOI | |
出版ステータス | 出版済み - 4月 11 2012 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 化学 (全般)