Chloride-based CVD growth of silicon carbide for electronic applications

A study was conducted to demonstrate chloride-based chemical vapor deposition (CVD) growth of silicon carbide (SiC) for electronic applications. SiC homoepitaxial growth was done using CVD with silane (SiH ₄) as the silicon precursor and light hydrocarbons, including ethylene (C ₂H ₄) or propane (C ₃H ₈) as the carbon precursor. Simulation was an invaluable tool along with comparisons between different chlorinated chemistries to obtain a deeper understanding of the chloride-based process and provide more information. A number of approaches were selected to add chlorine to the gas mixture for the growth of SiC epitaxial layers using a chloride-based chemistry.