Chloride-based CVD growth of silicon carbide for electronic applications

Henrik Pedersen, Stefano Leone, Olof Kordina, Anne Henry, Shin Ichi Nishizawa, Yaroslav Koshka, Erik Janzén

研究成果: Contribution to journalReview article査読

66 被引用数 (Scopus)

抄録

A study was conducted to demonstrate chloride-based chemical vapor deposition (CVD) growth of silicon carbide (SiC) for electronic applications. SiC homoepitaxial growth was done using CVD with silane (SiH 4) as the silicon precursor and light hydrocarbons, including ethylene (C 2H 4) or propane (C 3H 8) as the carbon precursor. Simulation was an invaluable tool along with comparisons between different chlorinated chemistries to obtain a deeper understanding of the chloride-based process and provide more information. A number of approaches were selected to add chlorine to the gas mixture for the growth of SiC epitaxial layers using a chloride-based chemistry.

本文言語英語
ページ(範囲)2434-2453
ページ数20
ジャーナルChemical Reviews
112
4
DOI
出版ステータス出版済み - 4 11 2012
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)

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