Class-C architecture for cross-coupled FBAR oscillator to further improve phase noise

Siti Amalina Enche Ab Rahim, Ramesh Pokharel

研究成果: ジャーナルへの寄稿レター

抄録

In this letter, a class-C architecture for an oscillator employing film bulk acoustic resonator (FBAR) is presented to improve the phase noise significantly in 1/f3 region. The advantages offers by class-C operation are exploited in order to reduce the noise contributed by the current-source transistor in cross-coupled topology. An adaptive biasing circuit is used in order to ensure the oscillation start-up. The post-layout simulation incorporating all parasitic and representing FBAR by modified Butterworth Van Dyke (MBVD) model illustrates the phase noise improvement by 17 dBc/Hz at 100 kHz offset of a 1.9 GHz carrier compared to the FBAR based cross-coupled topology presented by the authors [1].

元の言語英語
ジャーナルIEICE Electronics Express
14
発行部数5
DOI
出版物ステータス出版済み - 1 1 2017

Fingerprint

Acoustic resonators
Phase noise
resonators
oscillators
acoustics
topology
Topology
layouts
Transistors
transistors
oscillations
Networks (circuits)
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

Class-C architecture for cross-coupled FBAR oscillator to further improve phase noise. / Enche Ab Rahim, Siti Amalina; Pokharel, Ramesh.

:: IEICE Electronics Express, 巻 14, 番号 5, 01.01.2017.

研究成果: ジャーナルへの寄稿レター

@article{053c779055a543d3be60784700e13dac,
title = "Class-C architecture for cross-coupled FBAR oscillator to further improve phase noise",
abstract = "In this letter, a class-C architecture for an oscillator employing film bulk acoustic resonator (FBAR) is presented to improve the phase noise significantly in 1/f3 region. The advantages offers by class-C operation are exploited in order to reduce the noise contributed by the current-source transistor in cross-coupled topology. An adaptive biasing circuit is used in order to ensure the oscillation start-up. The post-layout simulation incorporating all parasitic and representing FBAR by modified Butterworth Van Dyke (MBVD) model illustrates the phase noise improvement by 17 dBc/Hz at 100 kHz offset of a 1.9 GHz carrier compared to the FBAR based cross-coupled topology presented by the authors [1].",
author = "{Enche Ab Rahim}, {Siti Amalina} and Ramesh Pokharel",
year = "2017",
month = "1",
day = "1",
doi = "10.1587/elex.14.20170056",
language = "English",
volume = "14",
journal = "IEICE Electronics Express",
issn = "1349-2543",
publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",
number = "5",

}

TY - JOUR

T1 - Class-C architecture for cross-coupled FBAR oscillator to further improve phase noise

AU - Enche Ab Rahim, Siti Amalina

AU - Pokharel, Ramesh

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this letter, a class-C architecture for an oscillator employing film bulk acoustic resonator (FBAR) is presented to improve the phase noise significantly in 1/f3 region. The advantages offers by class-C operation are exploited in order to reduce the noise contributed by the current-source transistor in cross-coupled topology. An adaptive biasing circuit is used in order to ensure the oscillation start-up. The post-layout simulation incorporating all parasitic and representing FBAR by modified Butterworth Van Dyke (MBVD) model illustrates the phase noise improvement by 17 dBc/Hz at 100 kHz offset of a 1.9 GHz carrier compared to the FBAR based cross-coupled topology presented by the authors [1].

AB - In this letter, a class-C architecture for an oscillator employing film bulk acoustic resonator (FBAR) is presented to improve the phase noise significantly in 1/f3 region. The advantages offers by class-C operation are exploited in order to reduce the noise contributed by the current-source transistor in cross-coupled topology. An adaptive biasing circuit is used in order to ensure the oscillation start-up. The post-layout simulation incorporating all parasitic and representing FBAR by modified Butterworth Van Dyke (MBVD) model illustrates the phase noise improvement by 17 dBc/Hz at 100 kHz offset of a 1.9 GHz carrier compared to the FBAR based cross-coupled topology presented by the authors [1].

UR - http://www.scopus.com/inward/record.url?scp=85015419698&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85015419698&partnerID=8YFLogxK

U2 - 10.1587/elex.14.20170056

DO - 10.1587/elex.14.20170056

M3 - Letter

AN - SCOPUS:85015419698

VL - 14

JO - IEICE Electronics Express

JF - IEICE Electronics Express

SN - 1349-2543

IS - 5

ER -