Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

Koichi Naniwae, Masaki Ohya, Kiichi Hamamoto, Kenichi Nishi, Tatsuya Sasaki

研究成果: ジャーナルへの寄稿Conference article

抄録

Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.

元の言語英語
ページ(範囲)126-129
ページ数4
ジャーナルConference Proceedings - International Conference on Indium Phosphide and Related Materials
出版物ステータス出版済み - 12 1 2004
外部発表Yes
イベント2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, 日本
継続期間: 5 31 20046 4 2004

Fingerprint

Metallorganic vapor phase epitaxy
Silicon
Cleaning
Leakage currents
Semiconductor lasers
Etching
Fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Cleaning of residual silicon on InP regrowth interface in MOVPE reactor. / Naniwae, Koichi; Ohya, Masaki; Hamamoto, Kiichi; Nishi, Kenichi; Sasaki, Tatsuya.

:: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 01.12.2004, p. 126-129.

研究成果: ジャーナルへの寄稿Conference article

@article{dd1f4200814f49c1bb7592f21cd6965a,
title = "Cleaning of residual silicon on InP regrowth interface in MOVPE reactor",
abstract = "Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.",
author = "Koichi Naniwae and Masaki Ohya and Kiichi Hamamoto and Kenichi Nishi and Tatsuya Sasaki",
year = "2004",
month = "12",
day = "1",
language = "English",
pages = "126--129",
journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
issn = "1092-8669",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

AU - Naniwae, Koichi

AU - Ohya, Masaki

AU - Hamamoto, Kiichi

AU - Nishi, Kenichi

AU - Sasaki, Tatsuya

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.

AB - Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.

UR - http://www.scopus.com/inward/record.url?scp=23744500793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23744500793&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23744500793

SP - 126

EP - 129

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

ER -