Cluster-free B-doped a-Si:H films deposited using SiH4 + B 10H14 multi-hollow discharges

Kenta Nakahara; Yuki Kawashima; Muneharu Sato; Takeaki Matsunaga; Kousuke Yamamoto; William Makoto Nakamura; Daisuke Yamashita; Hidefumi Matsuzaki; Giichiro Uchida; Naho Itagaki; Kazunori Koga; Masaharu Shiratani

doi:10.1109/TENCON.2010.5686686

Cluster-free B-doped a-Si:H films deposited using SiH₄ + B ₁₀H₁₄ multi-hollow discharges

Kenta Nakahara, Yuki Kawashima, Muneharu Sato, Takeaki Matsunaga, Kousuke Yamamoto, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

電子デバイス工学

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

We have deposited cluster-free B-doped a-Si:H films using a SiH ₄=B₁₀H₁₄ multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R=[B₁₀H ₁₄]/[SiH₄] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8nm/s R=0.0 % to 2.2nm/s for R=0.53%, but SiH emission intensity is almost constant for R=0-2.0%. These results suggest B_xH _y radicals enhance surface reaction probability of SiH₃ radicals. The optical bandgap of films is around 1.9eV, being larger than that of conventional B-doped films.

本文言語	英語
ホスト出版物のタイトル	TENCON 2010 - 2010 IEEE Region 10 Conference
ページ	2216-2218
ページ数	3
DOI	https://doi.org/10.1109/TENCON.2010.5686686
出版ステータス	出版済み - 12月 1 2010
イベント	2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, 日本継続期間: 11月 21 2010 → 11月 24 2010

その他

その他	2010 IEEE Region 10 Conference, TENCON 2010
国/地域	日本
City	Fukuoka
Period	11/21/10 → 11/24/10

!!!All Science Journal Classification (ASJC) codes

コンピュータサイエンスの応用
電子工学および電気工学

文献へのアクセス

10.1109/TENCON.2010.5686686

他のファイルとリンク

引用スタイル

Nakahara, K., Kawashima, Y., Sato, M., Matsunaga, T., Yamamoto, K., Nakamura, W. M., Yamashita, D., Matsuzaki, H., Uchida, G., Itagaki, N., Koga, K., & Shiratani, M. (2010). Cluster-free B-doped a-Si:H films deposited using SiH₄ + B ₁₀H₁₄ multi-hollow discharges. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2216-2218). [5686686] https://doi.org/10.1109/TENCON.2010.5686686

Nakahara, K, Kawashima, Y, Sato, M, Matsunaga, T, Yamamoto, K, Nakamura, WM, Yamashita, D, Matsuzaki, H, Uchida, G, Itagaki, N , Koga, K & Shiratani, M 2010, Cluster-free B-doped a-Si:H films deposited using SiH₄ + B ₁₀H₁₄ multi-hollow discharges. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686686, pp. 2216-2218, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, 日本, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686686

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title = "Cluster-free B-doped a-Si:H films deposited using SiH4 + B 10H14 multi-hollow discharges",

abstract = "We have deposited cluster-free B-doped a-Si:H films using a SiH 4=B10H14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R=[B10H 14]/[SiH4] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8nm/s R=0.0 % to 2.2nm/s for R=0.53%, but SiH emission intensity is almost constant for R=0-2.0%. These results suggest BxH y radicals enhance surface reaction probability of SiH3 radicals. The optical bandgap of films is around 1.9eV, being larger than that of conventional B-doped films.",

author = "Kenta Nakahara and Yuki Kawashima and Muneharu Sato and Takeaki Matsunaga and Kousuke Yamamoto and Nakamura, {William Makoto} and Daisuke Yamashita and Hidefumi Matsuzaki and Giichiro Uchida and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",

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AU - Nakahara, Kenta

AU - Kawashima, Yuki

AU - Sato, Muneharu

AU - Matsunaga, Takeaki

AU - Yamamoto, Kousuke

AU - Nakamura, William Makoto

AU - Yamashita, Daisuke

AU - Matsuzaki, Hidefumi

AU - Uchida, Giichiro

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We have deposited cluster-free B-doped a-Si:H films using a SiH 4=B10H14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R=[B10H 14]/[SiH4] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8nm/s R=0.0 % to 2.2nm/s for R=0.53%, but SiH emission intensity is almost constant for R=0-2.0%. These results suggest BxH y radicals enhance surface reaction probability of SiH3 radicals. The optical bandgap of films is around 1.9eV, being larger than that of conventional B-doped films.

AB - We have deposited cluster-free B-doped a-Si:H films using a SiH 4=B10H14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R=[B10H 14]/[SiH4] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8nm/s R=0.0 % to 2.2nm/s for R=0.53%, but SiH emission intensity is almost constant for R=0-2.0%. These results suggest BxH y radicals enhance surface reaction probability of SiH3 radicals. The optical bandgap of films is around 1.9eV, being larger than that of conventional B-doped films.

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