Cluster-less plasma CVD reactor and its application to a-Si:H film deposition

研究成果: ジャーナルへの寄稿Conference article

2 引用 (Scopus)

抄録

Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.

元の言語英語
ジャーナルMaterials Research Society Symposium - Proceedings
664
出版物ステータス出版済み - 12 1 2001
イベントAmorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, 米国
継続期間: 4 16 20014 20 2001

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Plasma CVD
reactors
vapor deposition
Gases
Silanes
Amorphous silicon
radio frequency discharge
Electrodes
stagnation point
Substrates
gases
silanes
amorphous silicon
electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

これを引用

@article{cec359773def4d85afd86da4e47cd9f8,
title = "Cluster-less plasma CVD reactor and its application to a-Si:H film deposition",
abstract = "Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.",
author = "Masaharu Shiratani and Kazunori Koga and Yukio Watanabe",
year = "2001",
month = "12",
day = "1",
language = "English",
volume = "664",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Cluster-less plasma CVD reactor and its application to a-Si:H film deposition

AU - Shiratani, Masaharu

AU - Koga, Kazunori

AU - Watanabe, Yukio

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.

AB - Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.

UR - http://www.scopus.com/inward/record.url?scp=0035560208&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035560208&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035560208

VL - 664

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -