Cluster-less plasma CVD reactor and its application to a-Si:H film deposition

研究成果: Contribution to journalConference article査読

2 被引用数 (Scopus)

抄録

Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.

本文言語英語
ページ(範囲)A561-A566
ジャーナルMaterials Research Society Symposium - Proceedings
664
DOI
出版ステータス出版済み - 2001
イベントAmorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, 米国
継続期間: 4 16 20014 20 2001

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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