Cluster-suppressed plasma CVD for deposition of high quality a-Si:H films

研究成果: ジャーナルへの寄稿Conference article

19 引用 (Scopus)

抄録

Correlation between microstructure parameter of a-Si:H films and cluster amount in silane discharges is revealed by using a cluster-suppressed plasma CVD method. The microstructure parameter Rα of a-Si:H films decreases below 0.003 with decreasing the cluster amount. A Schottky solar cell of a-Si:H films of Rα = 0.057 shows a high initial fill factor (FF) of 0.57 and high stabilized FF of 0.53. In addition, amount of clusters incorporated into a-Si:H films prepared for a discharge frequency f = 60 MHz is significantly low compared to those for f = 13.56, 40 MHz. These results suggest that the deposition of high quality a-Si:H films at a high rate can be realized by the cluster-suppressed plasma CVD method together with very high frequency discharges.

元の言語英語
ページ(範囲)1-5
ページ数5
ジャーナルThin Solid Films
427
発行部数1-2
DOI
出版物ステータス出版済み - 3 3 2003
イベントE-MRS, K - Strasbourg, フランス
継続期間: 6 18 20036 21 2003

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Plasma CVD
vapor deposition
Silanes
very high frequencies
microstructure
Microstructure
silanes
Solar cells
solar cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Cluster-suppressed plasma CVD for deposition of high quality a-Si:H films. / Shiratani, Masaharu; Koga, Kazunori; Watanabe, Yukio.

:: Thin Solid Films, 巻 427, 番号 1-2, 03.03.2003, p. 1-5.

研究成果: ジャーナルへの寄稿Conference article

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abstract = "Correlation between microstructure parameter of a-Si:H films and cluster amount in silane discharges is revealed by using a cluster-suppressed plasma CVD method. The microstructure parameter Rα of a-Si:H films decreases below 0.003 with decreasing the cluster amount. A Schottky solar cell of a-Si:H films of Rα = 0.057 shows a high initial fill factor (FF) of 0.57 and high stabilized FF of 0.53. In addition, amount of clusters incorporated into a-Si:H films prepared for a discharge frequency f = 60 MHz is significantly low compared to those for f = 13.56, 40 MHz. These results suggest that the deposition of high quality a-Si:H films at a high rate can be realized by the cluster-suppressed plasma CVD method together with very high frequency discharges.",
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AB - Correlation between microstructure parameter of a-Si:H films and cluster amount in silane discharges is revealed by using a cluster-suppressed plasma CVD method. The microstructure parameter Rα of a-Si:H films decreases below 0.003 with decreasing the cluster amount. A Schottky solar cell of a-Si:H films of Rα = 0.057 shows a high initial fill factor (FF) of 0.57 and high stabilized FF of 0.53. In addition, amount of clusters incorporated into a-Si:H films prepared for a discharge frequency f = 60 MHz is significantly low compared to those for f = 13.56, 40 MHz. These results suggest that the deposition of high quality a-Si:H films at a high rate can be realized by the cluster-suppressed plasma CVD method together with very high frequency discharges.

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