CMOS class-E power amplifier module with CPW bonding wires for 5GHz application

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

This paper presents a CMOS class-E power amplifier (PA) with high efficiency for 5GHz band wireless-mesh-network system using constant envelope modulation scheme. The proposed class-E PA employs injection-locking technique and parasitic compensation to reduce the required DC input power. This PA is realized by using 0.18 um CMOS process. This PA is placed on the lead frame and molded in the package for transmitter application. In our design, the position and length of the bonding wires are optimized by using EM simulation. In addition, a coplanar waveguide (CPW) structure was realized by the bonding wires in the RF port. Our PA module has a measured PAE = 41.0 %.

元の言語英語
ホスト出版物のタイトル2017 International Conference on Electronics Packaging, ICEP 2017
出版者Institute of Electrical and Electronics Engineers Inc.
ページ237-238
ページ数2
ISBN(電子版)9784990218836
DOI
出版物ステータス出版済み - 6 5 2017
イベント2017 International Conference on Electronics Packaging, ICEP 2017 - Tendo, Yamagata, 日本
継続期間: 4 19 20174 22 2017

出版物シリーズ

名前2017 International Conference on Electronics Packaging, ICEP 2017

その他

その他2017 International Conference on Electronics Packaging, ICEP 2017
日本
Tendo, Yamagata
期間4/19/174/22/17

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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  • これを引用

    Kanaya, H. (2017). CMOS class-E power amplifier module with CPW bonding wires for 5GHz application. : 2017 International Conference on Electronics Packaging, ICEP 2017 (pp. 237-238). [7939365] (2017 International Conference on Electronics Packaging, ICEP 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEP.2017.7939365