CMOS ultra-wideband low noise amplifier design

K. Yousef, Hongting Jia, Ramesh Pokharel, A. Allam, M. Ragab, Haruichi Kanaya, K. Yoshida

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

抄録

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 μm CMOS technology process.

元の言語英語
記事番号328406
ジャーナルInternational Journal of Microwave Science and Technology
DOI
出版物ステータス出版済み - 5 27 2013

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amplifier design
Broadband amplifiers
Low noise amplifiers
Ultra-wideband (UWB)
low noise
CMOS
amplifiers
broadband
impedance matching
inductors
Frequency bands
isolation
bandwidth
Bandwidth
output

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

CMOS ultra-wideband low noise amplifier design. / Yousef, K.; Jia, Hongting; Pokharel, Ramesh; Allam, A.; Ragab, M.; Kanaya, Haruichi; Yoshida, K.

:: International Journal of Microwave Science and Technology, 27.05.2013.

研究成果: ジャーナルへの寄稿記事

@article{0ded55f56c794c99a38e5c9cc9dabb51,
title = "CMOS ultra-wideband low noise amplifier design",
abstract = "This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 μm CMOS technology process.",
author = "K. Yousef and Hongting Jia and Ramesh Pokharel and A. Allam and M. Ragab and Haruichi Kanaya and K. Yoshida",
year = "2013",
month = "5",
day = "27",
doi = "10.1155/2013/328406",
language = "English",
journal = "International Journal of Microwave Science and Technology",
issn = "1687-5826",
publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - CMOS ultra-wideband low noise amplifier design

AU - Yousef, K.

AU - Jia, Hongting

AU - Pokharel, Ramesh

AU - Allam, A.

AU - Ragab, M.

AU - Kanaya, Haruichi

AU - Yoshida, K.

PY - 2013/5/27

Y1 - 2013/5/27

N2 - This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 μm CMOS technology process.

AB - This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 μm CMOS technology process.

UR - http://www.scopus.com/inward/record.url?scp=84877995033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877995033&partnerID=8YFLogxK

U2 - 10.1155/2013/328406

DO - 10.1155/2013/328406

M3 - Article

JO - International Journal of Microwave Science and Technology

JF - International Journal of Microwave Science and Technology

SN - 1687-5826

M1 - 328406

ER -