CMOS ultra-wideband low noise amplifier design

K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, K. Yoshida

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

抜粋

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 μm CMOS technology process.

元の言語英語
記事番号328406
ジャーナルInternational Journal of Microwave Science and Technology
DOI
出版物ステータス出版済み - 5 27 2013

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用