CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si

Shinichi Yoshiura, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Naofumi Shinya

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

To achieve high-precision planarization processing of poly-Si wafers, the authors focus on single-crystal Si wafers which have different crystal orientations of (100), (110) and (111), and consider the correlation of crystal orientations and CMP processing characteristics. Based on these considerations, the authors aim at high-precision planarization processing of Poly-Si wafers, As a result, the crystal grain boundary step in poly-Si wafer was reduced less than 10nm, however, some scratches were observed.

本文言語英語
ホスト出版物のタイトルAdvanced Metallization Conference 2010
ページ284-285
ページ数2
出版ステータス出版済み - 12 1 2010
イベントAdvanced Metallization Conference 2010 - Albany, NY, 米国
継続期間: 10 5 201010 7 2010

出版物シリーズ

名前Advanced Metallization Conference (AMC)
ISSN(印刷版)1540-1766

その他

その他Advanced Metallization Conference 2010
国/地域米国
CityAlbany, NY
Period10/5/1010/7/10

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 産業および生産工学

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