Co-implantation germanium with laser thermal annealing for the formation of np junction

Nur Nadhirah Rashid, Umar Abdul Aziz, Siti Rahmah Aid, Anthony Centeno, Suwa Akira, Hiroshi Ikenoue, Fang Xie

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

1 被引用数 (Scopus)

抄録

Germanium (Ge) is a potential candidates to replace silicon (Si) due to its higher carrier mobility, which is the key point for realizing device high-drive-current. However, fabricating highly activated np junction in Ge is challenging due to the severe damages introduced from ion-implantation interact with dopant during subsequent annealing process, and results in dopant deactivation. Further optimization of fabrication process parameters is needed to overcome this problem. Co-implantation technique has gained attention due to its stress-induced carrier activation by implanting two atoms with different size. Combining with laser thermal annealing promise further improvement in activation and recrystallization. In this work, co-implantation of phosphorus (P) and tin (Sn) were performed, followed by KrF laser thermal annealing, to form an np junction in Ge. Laser fluence was varied to achieve np junction with higher activation and recrystallization. It is found that high degree of recrystallization was obtained in higher-fluence annealed sample, with 40% decrease of sheet resistance compare to those of lower-fluence annealed sample. Raman peak shift (≈ 3.5 cm-1) was also observed in the higher-fluence annealed sample, suggesting increase of localized strain in the sample.

本文言語英語
ホスト出版物のタイトル17th International Workshop on Junction Technology, IWJT 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ91-93
ページ数3
ISBN(電子版)9784863486263
DOI
出版ステータス出版済み - 6月 30 2017
イベント17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, 日本
継続期間: 6月 1 20176月 2 2017

出版物シリーズ

名前17th International Workshop on Junction Technology, IWJT 2017

その他

その他17th International Workshop on Junction Technology, IWJT 2017
国/地域日本
CityKyoto
Period6/1/176/2/17

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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