Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain

Gou Nakagawa, Tanemasa Asano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 引用 (Scopus)

抜粋

A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450°C. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μ m-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.

元の言語英語
ホスト出版物のタイトルAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
ページ503-508
ページ数6
出版物ステータス出版済み - 6 12 2007
イベント2006 MRS Spring Meeting - San Francisco, CA, 米国
継続期間: 4 18 20064 20 2006

出版物シリーズ

名前Materials Research Society Symposium Proceedings
910
ISSN(印刷物)0272-9172

その他

その他2006 MRS Spring Meeting
米国
San Francisco, CA
期間4/18/064/20/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Nakagawa, G., & Asano, T. (2007). Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain. : Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 (pp. 503-508). (Materials Research Society Symposium Proceedings; 巻数 910).