Combinatorial catalyst approach for high-density growth of horizontally aligned single-walled carbon nanotubes on sapphire

Hiroki Ago, Yumiko Nakamura, Yui Ogawa, Masaharu Tsuji

    研究成果: Contribution to journalArticle査読

    20 被引用数 (Scopus)

    抄録

    We studied effects of metal catalyst and gas composition on the chemical vapor deposition (CVD) growth of horizontally aligned single-walled carbon nanotubes (SWCNTs) on r-plane sapphire substrates. The SWCNTs are sitting on the substrate and aligned along [11̄01̄] direction of the sapphire surface. A combinatorial metal deposition method was applied for single and binary metal catalysts to systematically investigate the thickness and the composition dependence. The horizontally-aligned SWCNTs grown from stripe-patterned catalysts enable the direct comparison of the catalytic activity based on nanotube density. We found that the SWCNT density strongly depends on the metal catalyst in the order Fe > Co ≫ Ni ≈ Cu, while no nanotubes were grown over Mo. In addition, the methane concentration during CVD strongly influenced the nanotube density, and the optimal concentration varied depending on the metal species and its thickness. The study on the binary metal catalysts revealed that Fe-Co combination increases the SWCNT density (7-9 tubes/μm) about twice of the original metal film. The Co-Cu binary catalyst also showed the high density (8-10 tubes/μm) under a limited methane concentration. Different catalytic activity of each metal is discussed.

    本文言語英語
    ページ(範囲)176-186
    ページ数11
    ジャーナルCarbon
    49
    1
    DOI
    出版ステータス出版済み - 1 2011

    All Science Journal Classification (ASJC) codes

    • Chemistry(all)
    • Materials Science(all)

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