Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

Ramesh Pokharel, G. Zhang, S. Amalina, Kousuke Hikichi, Shuji Tanaka, Ken Ya Hashimoto, Shinji Taniguchi

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抜粋

This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.

元の言語英語
ホスト出版物のタイトルIEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ページ316-319
ページ数4
ISBN(電子版)9781509001569
DOI
出版物ステータス出版済み - 2 17 2016
イベントIEEE MTT-S International Microwave and RF Conference, IMaRC 2015 - Hyderabad, インド
継続期間: 12 10 201512 12 2015

出版物シリーズ

名前IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015

その他

その他IEEE MTT-S International Microwave and RF Conference, IMaRC 2015
インド
Hyderabad
期間12/10/1512/12/15

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications

これを引用

Pokharel, R., Zhang, G., Amalina, S., Hikichi, K., Tanaka, S., Hashimoto, K. Y., & Taniguchi, S. (2016). Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. : IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015 (pp. 316-319). [7411452] (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMaRC.2015.7411452