TY - GEN
T1 - Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications
AU - Pokharel, Ramesh K.
AU - Zhang, G.
AU - Amalina, S.
AU - Hikichi, Kousuke
AU - Tanaka, Shuji
AU - Hashimoto, Ken Ya
AU - Taniguchi, Shinji
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2016/2/17
Y1 - 2016/2/17
N2 - This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.
AB - This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.
UR - http://www.scopus.com/inward/record.url?scp=84964826479&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964826479&partnerID=8YFLogxK
U2 - 10.1109/IMaRC.2015.7411452
DO - 10.1109/IMaRC.2015.7411452
M3 - Conference contribution
AN - SCOPUS:84964826479
T3 - IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015
SP - 316
EP - 319
BT - IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE MTT-S International Microwave and RF Conference, IMaRC 2015
Y2 - 10 December 2015 through 12 December 2015
ER -