Comparative study of Al-induced crystallization for poly-Si and Ge on insulating film

Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, M. Miyao

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

Al-induced crystallization (AIC) of Si and Ge has been comparatively investigated to realize poly-Si and poly-Ge layers on insulating films. For amorphous-Si (a-Si)/Al stacked structures, poly-Si oriented to the (111) direction was formed after annealing (450°C, 40h), and inversion of Si/Al layers occurred completely. On the other hand, poly-Ge with random orientations was formed in the local areas (diameter: 20 μm) of the Al layers after annealing (350°C, 150h) for a-Ge/Al stacked structures. In addition, inversion of Ge/Al layers did not occur. Understanding of AIC of Ge is necessary to establish a new technique for formation of high-quality poly-SiGe at low temperatures.

本文言語英語
ホスト出版物のタイトルECS Transactions - 5th International Symposium on ULSI Process Integration
ページ395-400
ページ数6
6
DOI
出版ステータス出版済み - 12 1 2007
イベント5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, 米国
継続期間: 10 7 200710 12 2007

出版物シリーズ

名前ECS Transactions
番号6
11
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他5th International Symposium on ULSI Process Integration - 212th ECS Meeting
国/地域米国
CityWashington, DC
Period10/7/0710/12/07

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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