Comparative study on electron transport in glow discharge a-Si:H films prepared from mono- and disilane gases

R. Hattori, K. Shirakawa, J. Shirafuji

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

Electron transport of glow discharge a-Si:H films prepared from disilane has been studied by means of time-of-flight measurement and compared with those of monosilane films. The room-temperature electron mobility in disilane films deposited at substrate temperatures above 190°C is comparable to that for monosilane films. However, the temperature dependence of the electron mobility reveals a significant difference in the tail state distribution between these films. This suggests that atomistic local structures of a-Si:H films depend critically on source gas species. The difference in the local structures of these films is also demonstrated by the substrate temperature dependence of the electron mobility; the room-temperature electron mobility for disilane films decreases more rapidly with decreasing substrate temperature below 180°C than the case for monosilane films.

元の言語英語
ページ(範囲)649-652
ページ数4
ジャーナルSolid State Communications
62
発行部数9
DOI
出版物ステータス出版済み - 6 1987
外部発表Yes

Fingerprint

Glow discharges
glow discharges
Gases
Electron mobility
gases
electron mobility
electrons
Temperature
Substrates
monosilane
Electron Transport
temperature dependence
room temperature
temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

これを引用

Comparative study on electron transport in glow discharge a-Si:H films prepared from mono- and disilane gases. / Hattori, R.; Shirakawa, K.; Shirafuji, J.

:: Solid State Communications, 巻 62, 番号 9, 06.1987, p. 649-652.

研究成果: ジャーナルへの寄稿記事

@article{03ea0975214e4275aac75d1a97c78678,
title = "Comparative study on electron transport in glow discharge a-Si:H films prepared from mono- and disilane gases",
abstract = "Electron transport of glow discharge a-Si:H films prepared from disilane has been studied by means of time-of-flight measurement and compared with those of monosilane films. The room-temperature electron mobility in disilane films deposited at substrate temperatures above 190°C is comparable to that for monosilane films. However, the temperature dependence of the electron mobility reveals a significant difference in the tail state distribution between these films. This suggests that atomistic local structures of a-Si:H films depend critically on source gas species. The difference in the local structures of these films is also demonstrated by the substrate temperature dependence of the electron mobility; the room-temperature electron mobility for disilane films decreases more rapidly with decreasing substrate temperature below 180°C than the case for monosilane films.",
author = "R. Hattori and K. Shirakawa and J. Shirafuji",
year = "1987",
month = "6",
doi = "10.1016/0038-1098(87)90208-0",
language = "English",
volume = "62",
pages = "649--652",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Comparative study on electron transport in glow discharge a-Si:H films prepared from mono- and disilane gases

AU - Hattori, R.

AU - Shirakawa, K.

AU - Shirafuji, J.

PY - 1987/6

Y1 - 1987/6

N2 - Electron transport of glow discharge a-Si:H films prepared from disilane has been studied by means of time-of-flight measurement and compared with those of monosilane films. The room-temperature electron mobility in disilane films deposited at substrate temperatures above 190°C is comparable to that for monosilane films. However, the temperature dependence of the electron mobility reveals a significant difference in the tail state distribution between these films. This suggests that atomistic local structures of a-Si:H films depend critically on source gas species. The difference in the local structures of these films is also demonstrated by the substrate temperature dependence of the electron mobility; the room-temperature electron mobility for disilane films decreases more rapidly with decreasing substrate temperature below 180°C than the case for monosilane films.

AB - Electron transport of glow discharge a-Si:H films prepared from disilane has been studied by means of time-of-flight measurement and compared with those of monosilane films. The room-temperature electron mobility in disilane films deposited at substrate temperatures above 190°C is comparable to that for monosilane films. However, the temperature dependence of the electron mobility reveals a significant difference in the tail state distribution between these films. This suggests that atomistic local structures of a-Si:H films depend critically on source gas species. The difference in the local structures of these films is also demonstrated by the substrate temperature dependence of the electron mobility; the room-temperature electron mobility for disilane films decreases more rapidly with decreasing substrate temperature below 180°C than the case for monosilane films.

UR - http://www.scopus.com/inward/record.url?scp=0023360530&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023360530&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(87)90208-0

DO - 10.1016/0038-1098(87)90208-0

M3 - Article

AN - SCOPUS:0023360530

VL - 62

SP - 649

EP - 652

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 9

ER -