Comparative study on electron transport in glow discharge a-Si:H films prepared from mono- and disilane gases

R. Hattori, K. Shirakawa, J. Shirafuji

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

Electron transport of glow discharge a-Si:H films prepared from disilane has been studied by means of time-of-flight measurement and compared with those of monosilane films. The room-temperature electron mobility in disilane films deposited at substrate temperatures above 190°C is comparable to that for monosilane films. However, the temperature dependence of the electron mobility reveals a significant difference in the tail state distribution between these films. This suggests that atomistic local structures of a-Si:H films depend critically on source gas species. The difference in the local structures of these films is also demonstrated by the substrate temperature dependence of the electron mobility; the room-temperature electron mobility for disilane films decreases more rapidly with decreasing substrate temperature below 180°C than the case for monosilane films.

本文言語英語
ページ(範囲)649-652
ページ数4
ジャーナルSolid State Communications
62
9
DOI
出版ステータス出版済み - 6 1987
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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