Comparison between Ar+CH4 cathode and anode coupling chemical vapor depositions of hydrogenated amorphous carbon films

Sung Hwa Hwang, Ryosuke Iwamoto, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Tatsuyuki Nakatani, Masaharu Shiratani

研究成果: Contribution to journalArticle査読

抄録

This research focuses on the comparison between cathode- and anode coupling deposition characteristics of hydrogenated amorphous carbon (a-C:H) using the capacitively coupled plasma (CCP) method. a-C:H films were fabricated by Ar+CH4 CCP chemical vapor deposition. The cathode and anode coupling depositions were simultaneously performed in a single CCP reactor. Compared to the anode coupling process, the cathode coupling process provides high-kinetic-energy ions impinging on the film surface. The cathode coupling process produced a-C:H films with a mass density of 1.75 g/cm3 and a hydrogen content of 36% at a deposition rate of 22.9 nm/min. By contrast, the anode coupling process resulted in a-C:H films with a mass density of 1.4 g/cm3 and a hydrogen content of 50% at a deposition rate of 10 nm/min. Raman spectroscopy shows that a-C:H films in the cathode coupling process have a highly disordered bonding, whereas a-C:H films in the anode coupling process have highly strained graphite.

本文言語英語
論文番号138701
ジャーナルThin Solid Films
729
DOI
出版ステータス出版済み - 7 1 2021

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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