Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface

Keiki Fukumoto, Ayse Seyhan, Ken Onda, Shunri Oda, Shin Ya Koshihara

研究成果: ジャーナルへの寄稿記事

抄録

Semiconductor quantum dots (QDs) have been widely used in various optoelectronic devices. Extensive studies have been devoted to the application of Si QDs with the aim of realizing various optoelectronic functions based on the modified energy band structure in QDs compared with bulk crystals. Therefore, it is necessary to be able to directly probe the carrier dynamics in single Si QDs of nanoscale dimensions deposited on a SiO2/Si surface, where the environment is compatible with Si-based semiconductor devices. This letter reports the observation and comparison of the ultrafast electron dynamics just after the photoexcitation of isolated and clustered Si QDs on a SiO2/Si surface using time-resolved photoemission electron microscopy with spatial and temporal resolutions of 50 nm and 100 fs, respectively. The detailed structure of QDs was confirmed directly by scanning electron microscopy observations. The results obtained in the present study show that the carrier lifetime in isolated QDs is shorter than that in clustered QDs. This is consistent with the electron-hole interaction in nanospace, significantly modifying the carrier recombination rates.

元の言語英語
記事番号053105
ジャーナルApplied Physics Letters
115
発行部数5
DOI
出版物ステータス出版済み - 7 29 2019

Fingerprint

quantum dots
electrons
carrier lifetime
optoelectronic devices
temporal resolution
photoexcitation
semiconductor devices
energy bands
electron microscopy
photoelectric emission
spatial resolution
scanning electron microscopy
probes
crystals
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface. / Fukumoto, Keiki; Seyhan, Ayse; Onda, Ken; Oda, Shunri; Koshihara, Shin Ya.

:: Applied Physics Letters, 巻 115, 番号 5, 053105, 29.07.2019.

研究成果: ジャーナルへの寄稿記事

@article{cf82d78d9e51437db96edce4c5a65a6d,
title = "Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface",
abstract = "Semiconductor quantum dots (QDs) have been widely used in various optoelectronic devices. Extensive studies have been devoted to the application of Si QDs with the aim of realizing various optoelectronic functions based on the modified energy band structure in QDs compared with bulk crystals. Therefore, it is necessary to be able to directly probe the carrier dynamics in single Si QDs of nanoscale dimensions deposited on a SiO2/Si surface, where the environment is compatible with Si-based semiconductor devices. This letter reports the observation and comparison of the ultrafast electron dynamics just after the photoexcitation of isolated and clustered Si QDs on a SiO2/Si surface using time-resolved photoemission electron microscopy with spatial and temporal resolutions of 50 nm and 100 fs, respectively. The detailed structure of QDs was confirmed directly by scanning electron microscopy observations. The results obtained in the present study show that the carrier lifetime in isolated QDs is shorter than that in clustered QDs. This is consistent with the electron-hole interaction in nanospace, significantly modifying the carrier recombination rates.",
author = "Keiki Fukumoto and Ayse Seyhan and Ken Onda and Shunri Oda and Koshihara, {Shin Ya}",
year = "2019",
month = "7",
day = "29",
doi = "10.1063/1.5097611",
language = "English",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface

AU - Fukumoto, Keiki

AU - Seyhan, Ayse

AU - Onda, Ken

AU - Oda, Shunri

AU - Koshihara, Shin Ya

PY - 2019/7/29

Y1 - 2019/7/29

N2 - Semiconductor quantum dots (QDs) have been widely used in various optoelectronic devices. Extensive studies have been devoted to the application of Si QDs with the aim of realizing various optoelectronic functions based on the modified energy band structure in QDs compared with bulk crystals. Therefore, it is necessary to be able to directly probe the carrier dynamics in single Si QDs of nanoscale dimensions deposited on a SiO2/Si surface, where the environment is compatible with Si-based semiconductor devices. This letter reports the observation and comparison of the ultrafast electron dynamics just after the photoexcitation of isolated and clustered Si QDs on a SiO2/Si surface using time-resolved photoemission electron microscopy with spatial and temporal resolutions of 50 nm and 100 fs, respectively. The detailed structure of QDs was confirmed directly by scanning electron microscopy observations. The results obtained in the present study show that the carrier lifetime in isolated QDs is shorter than that in clustered QDs. This is consistent with the electron-hole interaction in nanospace, significantly modifying the carrier recombination rates.

AB - Semiconductor quantum dots (QDs) have been widely used in various optoelectronic devices. Extensive studies have been devoted to the application of Si QDs with the aim of realizing various optoelectronic functions based on the modified energy band structure in QDs compared with bulk crystals. Therefore, it is necessary to be able to directly probe the carrier dynamics in single Si QDs of nanoscale dimensions deposited on a SiO2/Si surface, where the environment is compatible with Si-based semiconductor devices. This letter reports the observation and comparison of the ultrafast electron dynamics just after the photoexcitation of isolated and clustered Si QDs on a SiO2/Si surface using time-resolved photoemission electron microscopy with spatial and temporal resolutions of 50 nm and 100 fs, respectively. The detailed structure of QDs was confirmed directly by scanning electron microscopy observations. The results obtained in the present study show that the carrier lifetime in isolated QDs is shorter than that in clustered QDs. This is consistent with the electron-hole interaction in nanospace, significantly modifying the carrier recombination rates.

UR - http://www.scopus.com/inward/record.url?scp=85070085695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070085695&partnerID=8YFLogxK

U2 - 10.1063/1.5097611

DO - 10.1063/1.5097611

M3 - Article

AN - SCOPUS:85070085695

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053105

ER -