抄録
Nanoimprint lithography (NIL) is a promising candidate technology to fabricate patterned media for the next generation hard disk drives (HDD). The requirement of pattern pitch for the HDD or discrete-track recording (DTR) media will be as small as from 40 to 50 nm by 2011 or 2012. However not only to create such fine pitch but also long e-beam writing time such as 1 week with conventional high resolution resist ZEP520A are critical. This paper addresses the fabrication processes to combine silicon substrate and a new chemically amplified resist (CAR) for the master molds of this NIL. The e-beam writing speed with this new CAR was achieved over 3-times faster while 50 nm fine DTR patterns were demonstrated with rotary stage e-beam writer. Furthermore, the replication with J-FIL from the master mold into quartz working mold was also demonstrated.
本文言語 | 英語 |
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ページ(範囲) | 1975-1977 |
ページ数 | 3 |
ジャーナル | Microelectronic Engineering |
巻 | 88 |
号 | 8 |
DOI | |
出版ステータス | 出版済み - 8 1 2011 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering