Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium

Nur Nadhirah Mohamad Rashid, Umar Abdul Aziz, Siti Rahmah Aid, Anthony Centeno, Satoru Matsumoto, Fang Xie, Akira Suwa, Hiroshi Ikenoue

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced active carrier concentration attributed to the stress associated with atomic size of the non-dopant. In this work, phosphorus (P) and tin (Sn) have been selected as dopant and non-dopant atoms for the co-implantation process. Theoretical analysis on dopant distribution in the substrate was performed using TRIM software. The calculation predicted a maximum concentration of n-type dopant up to 1E20 cm-3. Fabricated samples were then experimentally analyzed using SIMS for depth profiling. A difference of less than one order of magnitude was observed from the comparison of both results. The difference between TRIM and SIMS is attributed to the sputtering effect and the rise of temperature during co-implantation process.

元の言語英語
ホスト出版物のタイトルIEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference
出版者Institute of Electrical and Electronics Engineers Inc.
ページ389-392
ページ数4
ISBN(電子版)9781509009251
DOI
出版物ステータス出版済み - 10 12 2017
イベント2016 IEEE Industrial Electronics and Applications Conference, IEACon 2016 - Kota Kinabalu, Sabah, マレーシア
継続期間: 11 20 201611 22 2016

出版物シリーズ

名前IEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference

その他

その他2016 IEEE Industrial Electronics and Applications Conference, IEACon 2016
マレーシア
Kota Kinabalu, Sabah
期間11/20/1611/22/16

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

これを引用

Rashid, N. N. M., Aziz, U. A., Aid, S. R., Centeno, A., Matsumoto, S., Xie, F., ... Ikenoue, H. (2017). Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium. : IEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference (pp. 389-392). [8067411] (IEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEACON.2016.8067411