Comparison of theoretical limits between superjunction and field plate structures

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

32 被引用数 (Scopus)

抄録

This paper reports that theoretical limits for the superjunction (SJ) and field plate (FP) structures and the optimum application voltage range is discussed with the previous experimental data. The specific on-resistance limit of the SJ structure is as same as that of the FP structure and inverse proportional to the cell aspect ratio γSJ and γFP (= drift thickness/lateral cell pitch). The cell aspect ratio can be easily increased with the breakdown voltage due to the drift thickness. On the other hand, at the low voltage device, the aspect ratio is determined by the lateral cell pitch due to the process technology. At the FP structure, the insulator thickness interferes to increase the aspect ratio. From the viewpoints of the aspect ratio limit and the output capacitance stored energy (Eoss), the SJ structure is effective for high voltage MOSFETs and the FP structure is effective for low voltage ones. The border of the optimum application voltage is 100-200 V.

本文言語英語
ホスト出版物のタイトル2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
出版社Institute of Electrical and Electronics Engineers Inc.
ページ241-244
ページ数4
ISBN(印刷版)9781467351348
DOI
出版ステータス出版済み - 2013
外部発表はい
イベント2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 - Kanazawa, 日本
継続期間: 5月 26 20135月 30 2013

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(印刷版)1063-6854

会議

会議2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
国/地域日本
CityKanazawa
Period5/26/135/30/13

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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