Compensation for oxygen exchange rate limiting impurities on a Pr 0.1Ce0.9O2-™SOFC electrode material

S. R. Bishop, J. Druce, J. Kilner, T. Ishihara, K. Sasaki

研究成果: ジャーナルへの寄稿学術誌査読

5 被引用数 (Scopus)

抄録

Impurities on the surface of SOFC electrodes can dramatically reduce their interfacial transport. In this work, we use a novel in situ optical absorption relaxation technique to derive the oxygen exchange rate in the absence of electrodes, thereby studying the "innate" material. Si is found to be an impurity in high concentration, with its presence associated with an orders of magnitude decrease in oxygen exchange rate. Addition of La to the electrode surface is found to substantially improve oxygen exchange rate.

本文言語英語
ページ(範囲)2003-2007
ページ数5
ジャーナルECS Transactions
57
1
DOI
出版ステータス出版済み - 2013

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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