Composition dependence of viscosity for molten Ga1-xAs x (0.0≤x≤0.53)

Koichi Kakimoto, Taketoshi Hibiya

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

Viscosity of molten Ga1-xAsx was directly measured by an oscillating cup method. The composition dependence of the synergism viscosity remarkably increases in the vicinity of stoichiometric composition; strong temperature dependence of viscosity was also observed at that composition. Activation energy for viscous flow at the stoichiometric Ga 1-xAsx (x=0.5) melt ranges from 250 to 600 meV, which was larger than those of metals such as gallium and indium whose activation energies were about 60-100 meV. We estimate, therefore, that the melt of stoichiometric composition has middle-range ordering like an aggregation whose range is larger than that of short-range ordering in metals such as gallium and indium.

元の言語英語
ページ(範囲)1576-1577
ページ数2
ジャーナルApplied Physics Letters
52
発行部数19
DOI
出版物ステータス出版済み - 12 1 1988
外部発表Yes

Fingerprint

viscosity
gallium
indium
activation energy
viscous flow
metals
temperature dependence
estimates

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Composition dependence of viscosity for molten Ga1-xAs x (0.0≤x≤0.53). / Kakimoto, Koichi; Hibiya, Taketoshi.

:: Applied Physics Letters, 巻 52, 番号 19, 01.12.1988, p. 1576-1577.

研究成果: ジャーナルへの寄稿記事

@article{9abfcd16cd9a44ccb85f6e458dfceb6f,
title = "Composition dependence of viscosity for molten Ga1-xAs x (0.0≤x≤0.53)",
abstract = "Viscosity of molten Ga1-xAsx was directly measured by an oscillating cup method. The composition dependence of the synergism viscosity remarkably increases in the vicinity of stoichiometric composition; strong temperature dependence of viscosity was also observed at that composition. Activation energy for viscous flow at the stoichiometric Ga 1-xAsx (x=0.5) melt ranges from 250 to 600 meV, which was larger than those of metals such as gallium and indium whose activation energies were about 60-100 meV. We estimate, therefore, that the melt of stoichiometric composition has middle-range ordering like an aggregation whose range is larger than that of short-range ordering in metals such as gallium and indium.",
author = "Koichi Kakimoto and Taketoshi Hibiya",
year = "1988",
month = "12",
day = "1",
doi = "10.1063/1.99085",
language = "English",
volume = "52",
pages = "1576--1577",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Composition dependence of viscosity for molten Ga1-xAs x (0.0≤x≤0.53)

AU - Kakimoto, Koichi

AU - Hibiya, Taketoshi

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Viscosity of molten Ga1-xAsx was directly measured by an oscillating cup method. The composition dependence of the synergism viscosity remarkably increases in the vicinity of stoichiometric composition; strong temperature dependence of viscosity was also observed at that composition. Activation energy for viscous flow at the stoichiometric Ga 1-xAsx (x=0.5) melt ranges from 250 to 600 meV, which was larger than those of metals such as gallium and indium whose activation energies were about 60-100 meV. We estimate, therefore, that the melt of stoichiometric composition has middle-range ordering like an aggregation whose range is larger than that of short-range ordering in metals such as gallium and indium.

AB - Viscosity of molten Ga1-xAsx was directly measured by an oscillating cup method. The composition dependence of the synergism viscosity remarkably increases in the vicinity of stoichiometric composition; strong temperature dependence of viscosity was also observed at that composition. Activation energy for viscous flow at the stoichiometric Ga 1-xAsx (x=0.5) melt ranges from 250 to 600 meV, which was larger than those of metals such as gallium and indium whose activation energies were about 60-100 meV. We estimate, therefore, that the melt of stoichiometric composition has middle-range ordering like an aggregation whose range is larger than that of short-range ordering in metals such as gallium and indium.

UR - http://www.scopus.com/inward/record.url?scp=30244539561&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30244539561&partnerID=8YFLogxK

U2 - 10.1063/1.99085

DO - 10.1063/1.99085

M3 - Article

AN - SCOPUS:30244539561

VL - 52

SP - 1576

EP - 1577

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -