Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy

A. D. Giddings, J. G. Keizer, M. Hara, G. J. Hamhuis, H. Yuasa, H. Fukuzawa, P. M. Koenraad

研究成果: Contribution to journalArticle査読

38 被引用数 (Scopus)

抄録

This study compares cross-sectional scanning tunneling microscopy and atom probe tomography. We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two nanostructural analysis techniques. We studied the composition of the wetting layer and the QDs, and performed quantitative comparisons of the indium concentration profiles measured by each method. We show that computational models of the wetting layer and the QDs, based on experimental data, are consistent with both analytical approaches. This establishes a link between the two techniques and shows their complimentary behavior, an advantage which we exploit in order to highlight unique features of the examined QD material.

本文言語英語
論文番号205308
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
83
20
DOI
出版ステータス出版済み - 5 17 2011
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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