Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

A. Petersson, Anders Gustafsson, L. Samuelson, Satoru Tanaka, Yoshinobu Aoyagi

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

抄録

High quality epitaxial films of Al xGa 1-xN, grown on SiC substrates, were investigated using spatially resolved cathodoluminescence (CL), scanning electron microscopy, and atomic force microscopy. A variation in the observed peak energy position of the CL was related to alloy fluctuations. CL was used to reveal relative alloy fluctuations of approximately 1% on a sub-micrometer scale, with a precision difficult to surpass with other available techniques. By correlating data from the different techniques, a model was derived. The main feature of it is an alloy fluctuation on the micrometer scale, seeded during the initial growth and extending through the epitaxial film. These alloy fluctuations seems to be related to terrace steps (≈5 nm in height), formed preferentially at scratches on the SiC surface. This investigation indicates that the initial growth of epitaxial films is critical and structures formed at the beginning of the growth tend to persist throughout the growth. Further, a strain gradient from the SiC interface extending towards the surface, was observed.

元の言語英語
ジャーナルMRS Internet Journal of Nitride Semiconductor Research
7
出版物ステータス出版済み - 12 1 2002
外部発表Yes

Fingerprint

Cathodoluminescence
Epitaxial films
Substrates
Atomic force microscopy
Scanning electron microscopy
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

これを引用

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence. / Petersson, A.; Gustafsson, Anders; Samuelson, L.; Tanaka, Satoru; Aoyagi, Yoshinobu.

:: MRS Internet Journal of Nitride Semiconductor Research, 巻 7, 01.12.2002.

研究成果: ジャーナルへの寄稿記事

@article{56f0f728684c4b0fb6a3afb28374bbed,
title = "Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence",
abstract = "High quality epitaxial films of Al xGa 1-xN, grown on SiC substrates, were investigated using spatially resolved cathodoluminescence (CL), scanning electron microscopy, and atomic force microscopy. A variation in the observed peak energy position of the CL was related to alloy fluctuations. CL was used to reveal relative alloy fluctuations of approximately 1{\%} on a sub-micrometer scale, with a precision difficult to surpass with other available techniques. By correlating data from the different techniques, a model was derived. The main feature of it is an alloy fluctuation on the micrometer scale, seeded during the initial growth and extending through the epitaxial film. These alloy fluctuations seems to be related to terrace steps (≈5 nm in height), formed preferentially at scratches on the SiC surface. This investigation indicates that the initial growth of epitaxial films is critical and structures formed at the beginning of the growth tend to persist throughout the growth. Further, a strain gradient from the SiC interface extending towards the surface, was observed.",
author = "A. Petersson and Anders Gustafsson and L. Samuelson and Satoru Tanaka and Yoshinobu Aoyagi",
year = "2002",
month = "12",
day = "1",
language = "English",
volume = "7",
journal = "MRS Internet Journal of Nitride Semiconductor Research",
issn = "1092-5783",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

AU - Petersson, A.

AU - Gustafsson, Anders

AU - Samuelson, L.

AU - Tanaka, Satoru

AU - Aoyagi, Yoshinobu

PY - 2002/12/1

Y1 - 2002/12/1

N2 - High quality epitaxial films of Al xGa 1-xN, grown on SiC substrates, were investigated using spatially resolved cathodoluminescence (CL), scanning electron microscopy, and atomic force microscopy. A variation in the observed peak energy position of the CL was related to alloy fluctuations. CL was used to reveal relative alloy fluctuations of approximately 1% on a sub-micrometer scale, with a precision difficult to surpass with other available techniques. By correlating data from the different techniques, a model was derived. The main feature of it is an alloy fluctuation on the micrometer scale, seeded during the initial growth and extending through the epitaxial film. These alloy fluctuations seems to be related to terrace steps (≈5 nm in height), formed preferentially at scratches on the SiC surface. This investigation indicates that the initial growth of epitaxial films is critical and structures formed at the beginning of the growth tend to persist throughout the growth. Further, a strain gradient from the SiC interface extending towards the surface, was observed.

AB - High quality epitaxial films of Al xGa 1-xN, grown on SiC substrates, were investigated using spatially resolved cathodoluminescence (CL), scanning electron microscopy, and atomic force microscopy. A variation in the observed peak energy position of the CL was related to alloy fluctuations. CL was used to reveal relative alloy fluctuations of approximately 1% on a sub-micrometer scale, with a precision difficult to surpass with other available techniques. By correlating data from the different techniques, a model was derived. The main feature of it is an alloy fluctuation on the micrometer scale, seeded during the initial growth and extending through the epitaxial film. These alloy fluctuations seems to be related to terrace steps (≈5 nm in height), formed preferentially at scratches on the SiC surface. This investigation indicates that the initial growth of epitaxial films is critical and structures formed at the beginning of the growth tend to persist throughout the growth. Further, a strain gradient from the SiC interface extending towards the surface, was observed.

UR - http://www.scopus.com/inward/record.url?scp=3042688831&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042688831&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3042688831

VL - 7

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

SN - 1092-5783

ER -